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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
September 2005
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description
The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121.
Features
4A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time...................140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
JEDEC TO-220AB COLLECTOR (FLANGE) GATE EMITTER
JEDEC TO-263AB
EMITTER COLLECTOR GATE
COLLECTOR (FLANGE)
JEDEC TO-262 EMITTER GATE COLLECTOR (FLANGE) COLLECTOR G
C
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2005 Fairchild Semiconductor Corporation HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
1
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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Absolute Maximum Ratings TA = 25C unless otherwise noted
Symbol BVCES IC25 IC110 I(AVG) ICM VGES VGEM SSOA PD TJ, TSTG TL tSC Parameter Collector to Emitter Voltage Collector Current Continuous At TC = 25oC Average Diode Forward Current at 110oC Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150oC (Figure 14) Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC Collector Current Continuous At TC = 110oC Ratings 600 14 7 8 56 20 30 40A at 480V 60 0.487 -40 to 150 260 1 8 W W/oC
o o
Units V A A A A V V
Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Short Circuit Withstand Time (Note 2) at VGE = 15V Short Circuit Withstand Time (Note 2) at VGE = 10V
C C
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50W.
Thermal Characteristics
RJC Thermal Resistance IGBT Thermal Resistance Diode 2.1 2.0
oC/W oC/W
Package Marking and Ordering Information
Part Number HGTP7N60C3D HGT1S7N60C3DS HGT1S7N60C3D Package TO-220AB TO-263AB TO-262 Brand G7N60C3D G7N60C3D G7N60C3D
NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
2 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVCES ICES IGES VCE(SAT) Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate-Emitter Leakage Current Collector to Emitter Saturation Voltage IC = 250A, VGE = 0V 600 TC = 25oC TC = 150oC 1.6 1.9 250 2.0 250 2.0 2.4 V A mA nA V V VCE = BVCES, TC = 25oC VCE = BVCES, TC = 150oC VGE = 25V IC = IC110, VGE = 15V
On Characteristics
VGE(TH) Gate-Emitter Threshold Voltage IC = 250A, VCE = VGE, TC = 25oC TJ = RG = 50 , VGE = 15V, L = 1mH 150oC, VCE(PK) = 480V VCE(PK) = 600V 3.0 40 60 5.0 8 6.0 V A A V
SSOA VGEP
Switching SOA Gate to Emitter Plateau Voltage
IC = IC110, VCE = 0.5 BVCES
Switching Characteristics
td(ON)I trI td(OFF)I tfI EON EOFF QG(ON) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) On-State Gate Charge TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 50 L = 1mH VGE = 15V IC = IC110, VCE = 0.5 BVCES VGE = 20V 8.5 11.5 350 140 165 600 23 30 400 275 30 38 ns ns ns ns J J nC nC
Drain-Source Diode Characteristics and Maximum Ratings
VEC trr
NOTES: 3.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
Diode Forward Voltage Diode Reverse Recovery Time
IEC = 7A IEC = 7A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s
-
1.9 25 18
2.5 37 30
V ns ns
3 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
40 DUTY CYCLE <0.5%, V = 10V CE PULSE DURATION = 250s 35 30 25 20 15 10 5 0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 14 TC = 150oC TC = 25 C TC = -40oC
o
40
PULSE DURATION = 250s, DUTY CYCLE <0.5%, 35 TC = 25oC 30 25 20 15 10 5 0 0 2 4 VGE = 15.0V
12.0V
10.0V
9.0V 8.5V 8.0V 7.5V 7.0V 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. TRANSFER CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
40 35 30 25 20 15 10 5 0 0
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V
40 35 30 25 20 15 10 5 0 0
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC
TC = -40oC
TC = 150oC
TC = 150oC TC = 25oC
1
2
3
4
5
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
15 VGE = 15V
Figure 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
ICE , DC COLLECTOR CURRENT (A)
VCE = 360V, RG = 50, TJ = 125oC
12
10 ISC 8
120
9
100
6
6
80
3
4 tSC 2 10 13 14 11 12 VGE , GATE TO EMITTER VOLTAGE (V)
60
0
25
50
75
100
125
150
40 15
TC , CASE TEMPERATURE (oC)
Figure 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE
Figure 6. SHORT CIRCUIT WITHSTAND TIME
4 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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ISC, PEAK SHORT CIRCUIT CURRENT (A)
12
140
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Typical Performance Curves
50
td(ON)I , TURN-ON DELAY TIME (ns)
500
td(OFF)I , TURN-OFF DELAY TIME (ns)
40 30
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
450 400 350
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
20 VGE = 10V VGE = 15V 10
VGE = 10V or 15V 300
250
5
2
5
8
11
14
17
20
200
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
8 11 14 17 5 ICE , COLLECTOR TO EMITTER CURRENT (A)
20
Figure 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
200 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V VGE = 10V
tfI , FALL TIME (ns)
Figure 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
300 250 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
trI , TURN-ON RISE TIME (ns)
100
200 VGE = 10V or 15V 150
VGE = 15V
10
5
2
17 14 8 11 ICE , COLLECTOR TO EMITTER CURRENT (A) 5
20
100 2
5
8
11
14
17
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
2000
EON , TURN-ON ENERGY LOSS (J)
Figure 10. Single Pulse Maximum Power Dissipation
3000
EOFF, TURN-OFF ENERGY LOSS (J)
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V VGE = 10V
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
1000
500 VGE = 15V
1000
500
VGE = 10V OR 15V
100
40
2
5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A)
20
100
2
5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A)
20
Figure 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
Figure 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
5 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
fMAX , OPERATING FREQUENCY (kHz)
100
TJ = 150oC, TC = 75oC RG = 50, L = 1mH
50
TJ = 150oC, VGE = 15V, RG = 50, L = 1mH
40
VGE = 10V 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W 1 2
VGE = 15V
30
20
10
0
10
20
30
0
100
200
300
400
500
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 14. MINIMUM SWITCHING SAFE OPERATING AREA
600 500 400 300 200 100 0 IG(REF) = 1.044mA, RL = 50, TC = 25oC 5 10 15 20 25 15 12.5 10 7.5 5 2.5 0 30
VGE, GATE TO EMITTER VOLTAGE (V)
1200 1000
C, CAPACITANCE (pF)
FREQUENCY = 1MHz CIES
800 600 400 200 0 CRES 0 5 10 15 COES 20 25
VCE = 200V VCE = 400V VCE = 600V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
ZJC , NORMALIZED THERMAL RESPONSE
Figure 16. GATE CHARGE WAVEFORMS
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-4 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 101 t1 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
10-2 10-5
Figure 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
6 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Typical Performance Curves
30
IEC , FORWARD CURRENT (A)
30 25 20 15 10
TC = 25oC, dIEC/dt = 200A/s
10
tr , RECOVERY TIMES (ns)
trr
ta
175oC 1.0 0.5
100oC
25oC
tb 5 0 0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
1
3
7
VEC , FORWARD VOLTAGE (V)
IEC , FORWARD CURRENT (A)
Figure 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
Figure 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
L = 1mH RHRD660 VGE RG = 50 +
90% 10% EOFF VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I EON
-
Figure 20. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 21. SWITCHING TEST WAVEFORMS
7 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBDTM LD26 or equivalent. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. Tips of soldering irons should be grounded. Devices should never be inserted into or removed from circuits with power on. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
8 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B
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